SEAS in the News

EE Power reports that UB researchers have developed a breakthrough in power electronics, a lateral gallium oxide-based transistor that can withstand more than 8,000 volts while being thinner than a sheet of paper.

IEEE Spectrum reports on research led by UB associate professor of electrical engineering Uttam Singisetti. The article focuses on Singisetti’s work with transistors made primarily with gallium oxide, and how his latest device can handle more than 8,000 volts.

ElectronicsWeekly reported that organic surface passivation, a chemical process that involves coating the device to reduce the chemical reactivity of its surface, has allowed a gallium oxide transistor developed by UB electrical engineers to hold-off 6.72kV, the highest reported for a lateral metal–oxide–semiconductor field-effect transistor (MOSFET).

The Engineer reported that researchers from North Carolina State University and Kristofer Reyes, an assistant professor of materials science at UB, have developed the“Artificial Chemist,” which incorporates artificial intelligence and an automated system for performing chemical reactions to accelerate R&D and manufacturing of commercially desirable materials.

New Atlas covered the invention by researchers in the Department of Electrical Engineering of paper-thin, ultra-high voltage transistors based on gallium oxide that could greatly improve the efficiency of a broad range of consumer electronics, especially electric vehicles.

The American Association for the Advancement of Science (AAAS)  publicized a paper by electrical engineering professor Uttam Singisetti on a gallium oxide-based transistor as part of its Eureka Alerts.