Published June 5, 2020 This content is archived.
ElectronicsWeekly reported that organic surface passivation, a chemical process that involves coating the device to reduce the chemical reactivity of its surface, has allowed a gallium oxide transistor developed by UB electrical engineers to hold-off 6.72kV, the highest reported for a lateral metal–oxide–semiconductor field-effect transistor (MOSFET).
The work is described in the IEEE Xplore paper Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage.