University at Buffalo engineers develop a transistor that can handle 8,000 volts

Published June 24, 2020


All About Circuits reported on UB-led research that developed a paper-thin gallium oxide transistor that can handle more than 8,000 volts of electricity. The transistor could help make large and bulky batteries and power systems, such as those used in electric vehicles, smaller.

“To really push these technologies into the future, we need next-generation electronic components that can handle greater power loads without increasing the size of power electronics systems,” said Uttam Singisetti, lead investigator and associate professor of electrical engineering.

Read the story here.