Thin as paper, new transistor handles 8,000 volts

Published July 10, 2020


An article on reports on UB research that may improve the design and efficiency of MOSFETs, or metal oxide semiconductor field-effect transistors. transistors and provide a breakthrough for electric vehicles.

“The passivation layer is a simple, efficient and cost-effective way to boost the performance of gallium oxide transistors,” said Uttam Singisetti, associate professor of electrical engineering.

Read the story here.