Researchers develop paper-thin gallium oxide transistor that can withstand over 8,000 volts before breaking down

Published June 15, 2020


EE Power reports that UB researchers have developed a breakthrough in power electronics, a lateral gallium oxide-based transistor that can withstand more than 8,000 volts while being thinner than a sheet of paper.

The research was led by Uttam Singisetti, associate professor of electrical engineering.

Read the story here.