Atoms-thick transistors get faster using less power

Published December 23, 2020


IEEE Spectrum interviews Huamin Li, assistant professor of electrical engineering, about new transistor technology. The article reports that by combining graphene and molybdenum disulfide, researchers have made a transistor that operates at half the voltage and has a higher current density than any state-of-the-art 2D transistor previously under development.

“We were able to fully explore the untapped potential of 2D materials to make a transistor that shows better performance in terms of energy consumption and switching speed,” Li says.

The research is co-led by Huamin Li of the Department of Electrical Engineering, and Fei Yao, of the Department of Materials Design and Innovation.

Read the story here.