Atom-thin transistor uses half the voltage of common semiconductors, boosts current density

Published December 9, 2020

Print

Phys.org published a report on research co-led by electrical engineer Huamin Lion and materials scientist Fei Yao on a new, two-dimensional transistor made of graphene and the compound molybdenum disulfide that requires half the voltage of current semiconductors and has a current density greater than similar transistors under development.

The research is described in a paper accepted at the virtual 2020 IEEE International Electron Devices Meeting.

"New technologies are needed to extend the performance of electronic systems in terms of power, speed, and density. This next-generation transistor can rapidly switch while consuming low amounts of energy," says Huamin Li, assistant professor in the Department of Electrical Engineering and the paper's lead author.

"The transistor illustrates the enormous potential 2-D semiconductors and their ability to usher in energy-efficient nanoelectronic devices. This could ultimately lead to advancements in quantum research and development, and help extend Moore's Law," says Yao, assistant professor in the Department of Materials Design and Innovation.

Read the story here.