Advanced GaN and novel III-N devices for THz electronics; transport in III-N hetero-structures; novel devices utilizing new materials functionalities; energy-efficient, nano-electronics in emerging materials
The American Association for the Advancement of Science (AAAS) publicized a paper by electrical engineering professor Uttam Singisetti on a gallium oxide-based transistor as part of its Eureka Alerts.
SciTechDailycovered the invention by UB engineers of a paper-thin, gallium oxide-based transistor that can handle 8,000 volts and that could lead to smaller and more efficient electronic systems that control and convert electric power in electric cars, locomotives and airplanes.