Uttam Singisetti
PhD
Specialty/Research Focus
Advanced GaN and novel III-N devices for THz electronics; transport in III-N hetero-structures; novel devices utilizing new materials functionalities; energy-efficient, nano-electronics in emerging materials
Selected Publications
- M. Randle, A. Lipatov, A. Kumar, P. A. Dowben, A. Sinitskii, U. Singisetti, and J. P. Bird, "Reply to “Comment on ‘Gate-Controlled Metal–Insulator Transition in TiS3 Nanowire Field-Effect Transistors’”," ACS Nano, vol. 13, no. 8, pp. 8498-8500, 2019/08/27 2019.
- B. Chatterjee, K. Zeng, C. D. Nordquist, U. Singisetti, and S. Choi, "Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors," IEEE Transactions on Components, Packaging and Manufacturing Technology, pp. 1-1, 2019. IEEE Early Access. DOI: 10.1109/TCPMT.2019.2923356.
- "Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate.", Abhishek Vaidya, Jith Sarker, Yi Zhang, Lauren Lubecki, Joshua Wallace, Jonathan Poplawsky, Kohei Sasaki, Akito Kuramata, Amit Goyal, Joseph Gardella, Jr., Baishakhi Mazumder, and Uttam Singisetti, Journal of Applied Physics 126(9): 095702, 2019.
- "A field-plated Ga2O3 MOSFET with near 2-kV breakdown voltage and 520 mOhm-cm2 onresistance", Ke Zeng, Abhishek Vaidya and Uttam Singisetti, Applied Physics Express, vol. 12(8): 081003, July 2019.
- "Space-charge limited conduction in epitaxial chromia films grown on elemental and oxide-based metallic substrates", C.-P. Kwan, M. Street, A. Mahmood, W. Echtenkamp, M. Randle, K. He, J. Nathawat, N. Arabchigavkani, B. Barut, S. Yin, R. Dixit, U. Singisetti, Ch. Binek, and J. P. Bird, AIP Advances 9(5): 055018, 2019.
- "Characterization and Modeling of Co/BaTiO3/SrRuO3 Ferroelectric Tunnel Junction Memory by Capacitance-voltage (C-V), Current-voltage (I-V) and High-frequency Measurements", M. Abuwasib, H. Lee, J-W. Lee, C-B. Eom, A. Gruverman and U. Singisetti. IEEE Transactions on Electron Devices, vol. 66, no. 5, pp. 2186-2191, May 2019.
- "Flexible β-Ga2O3 Nanomembrane Schottky Barrier Diodes", E. Swinnich, M. N. Hasan, K. Zeng, Y. Dove, U. Singisetti, B. Mazumder, and, J.-H. Seo, Advancel Electronic Materials, vol.5, no. 3, p. 1800714, 2019. DOI: https://doi.org/10.1002/aelm.201800714.
- "Gate-Controlled Metal-Insulator Transition in TiS3 Nanowire Field-Effect Transistors", M. Randle, A. Lipatov, A. Kumar, C.-P. Kwan, J. Nathawat, B.Barut, S. Yin, K. He, N. Arabchigavkani, R. Dixit, T. Komesu, J. Avila, M. C. Asensio, P. A. Dowben, A. Sinitskii, U. Singisetti, and J. P. Bird, ACS Nano, 13 (1), pp 803-811, 2019. DOI: 10.1021/acsnano.8b08260.
- "Assessment of phonon scattering-related mobility in β-Ga2O3", A. Parisini, K. Ghosh, U. Singisetti, and R Fornari, Semiconductor Science and Technology 33(10), 105008 (2018).
- "Impact Ionization in β-Ga2O3", K. Ghosh, and U. Singisetti, Journal of Applied Physics, 124 (8), (2018).
- "Ga2O3 field plated MOSFETs with ohmic cap layer", K. Zeng, and U.Singisetti, accepted for presentation at the 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3), August 12-15, The Ohio State University (OSU) in Columbus, Ohio, 2019
- "Ab-initio Study of the Effects of Stress on the Low Field Electron Mobility in β-Ga2O3", A. Sharma, and U.Singisetti, accepted for presentation at the 3rd International Workshop on Gallium Oxide and Related Materials (IWGO-3), August 12-15, The Ohio State University (OSU) in Columbus, Ohio, 2019.
- Galiy, P. V., M. Randle, A. Lipatov, L. Wang, S. Gilbert, N. Vorobeva, A. Kumar, C. Kwan, J. Nathawat, B. Barut, S. Yin, N. Arabchigavkani, T. M. Nenchuk, T. Komesu, K. He, A. Yost, U. Singisetti, W. Mei, A. Sinitskii, J. P. Bird, and P. A. Dowben, "Building the Quasi One Dimensional Transistor from 2D Materials," in 2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON), 2019, pp. 679-682.
- " Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown betaGa2O3", S. Sharma, K. Zeng, A. Vaidya, and U. Singisetti, presented at the IEEE Device Research Conference, June 23-26, Ann Arbor, MI, 2019
- "710 V Breakdown Voltage in Field Plated Ga2O3 MOSFET", K. Zeng, A. Vaidya, and U. Singisetti, , IEEE DRC Tech Digest, 2018 Device Research Conference, June 25-28, 2018, University of California, Santa Barbara, USA.
- "Mixed-mode circuit simulation to characterize Ga2O3 MOSFET in different device Structures", I.H. Lee, A. Kumar, K. Zeng, U.Singisetti, and X. Yao, presented at the 5th IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA 2017), Oct 30-Nov-1, 2017, Albuquerque, NM USA.
- "Modeling and power loss evaluation of ultrawide band gap Ga2O3 device for high power applications,", I. Lee, A. Kumar, K. Zeng, U. Singisetti and X. Yao, 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, OH, 2017, pp. 4377-4382. doi: 10.1109/ECCE.2017.8096753
- "Hot Electrons in Layered Materials – A First Principles Perspective", K. Ghosh, U.Singisetti, presented at The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Buffalo, NY from July 17 – 21, 2017.
- "Electrical Evaluation of Epitaxial Chromia Thin Films Grown for Spintronic Device Application", C. P. Kwan, M. Street, A. Mahmood, W. Echtenkamp, J. Nathawat, N. Arabchigavkani, M. Zhao, , B. Barut, S. Yin, M. Randle, U. Singisetti, Ch. Binek and J. P. Bird, presented at The 20th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures, Buffalo, NY from July 17 – 21, 2017.
- "Temperature Dependent Characterization of Ga2O3 MOSFETs with Spin-on-Glass Source/Drain Doping", K. Zeng, and U. Singisetti, , IEEE DRC Tech Digest, 2017 Device Research Conference, June 25-28, 2017, University of Notre Dame, USA.