EE Power reports that UB researchers have developed a breakthrough in power electronics, a lateral gallium oxide-based transistor that can withstand more than 8,000 volts while being thinner than a sheet of paper.

IEEE Spectrum reports on research led by UB associate professor of electrical engineering Uttam Singisetti. The article focuses on Singisetti’s work with transistors made primarily with gallium oxide, and how his latest device can handle more than 8,000 volts.

The American Association for the Advancement of Science (AAAS)  publicized a paper by electrical engineering professor Uttam Singisetti on a gallium oxide-based transistor as part of its Eureka Alerts.

SciTechDaily covered the invention by UB engineers of a paper-thin, gallium oxide-based transistor that can handle 8,000 volts and that could lead to smaller and more efficient electronic systems that control and convert electric power in electric cars, locomotives and airplanes.