Uttam Singisetti

Associate Professor

Specialty/Research Focus: Advanced GaN and Novel III-N Devices for THz electronics; Transport in III-N Hetero-Structures; Novel Devices Utilizing New Materials Functionalities; Energy-Efficient, Nano-Electronics in Emerging Materials

Contact Information

230 H Davis Hall

Buffalo, NY 14260

Phone: (716) 645-1536

Email: uttamsin@buffalo.edu

View map

Uttam Singisetti is an Assistant Professor in the electrical engineering department. He received his BS, MS and PhD Degrees from Indian Institute of Technology, Madras, Arizona State University, and University of California, Santa Barbara (UCSB) respectively. His PhD research was on III-V MOSFET devices for post-Si logic applications. After his PhD, he worked as an Assistant Project Scientist in the Electrical and Computer Engineering department at UCSB. During this time he worked on novel N-polar Enhancement mode GaN devices for mm-wave applications. In summer of 2006, he was a research intern at the novel devices group at Intel Corporation. He joined the EE department at the University at Buffalo in Fall 2011.

His current research efforts include materials and device technology for high speed THz electronics in emerging III-Ns, transport and device physics in semiconductor hetero-structures, novel Ferroelectric and magneto-electric devices for post-CMOS applications.