Specialty/Research Focus: Advanced GaN and Novel III-N Devices for THz electronics; Transport in III-N Hetero-Structures; Novel Devices Utilizing New Materials Functionalities; Energy-Efficient, Nano-Electronics in Emerging Materials
Uttam Singisetti is an Assistant Professor in the electrical engineering department. He received his BS, MS and PhD Degrees from Indian Institute of Technology, Madras, Arizona State University, and University of California, Santa Barbara (UCSB) respectively. His PhD research was on III-V MOSFET devices for post-Si logic applications. After his PhD, he worked as an Assistant Project Scientist in the Electrical and Computer Engineering department at UCSB. During this time he worked on novel N-polar Enhancement mode GaN devices for mm-wave applications. In summer of 2006, he was a research intern at the novel devices group at Intel Corporation. He joined the EE department at the University at Buffalo in Fall 2011.