Atoms-thick transistors get faster using less power

Published December 23, 2020

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IEEE Spectrum interviews Huamin Li, assistant professor of electrical engineering, about new transistor technology. The article reports that by combining graphene and molybdenum disulfide, researchers have made a transistor that operates at half the voltage and has a higher current density than any state-of-the-art 2D transistor previously under development.

“We were able to fully explore the untapped potential of 2D materials to make a transistor that shows better performance in terms of energy consumption and switching speed,” Li says.

The research is co-led by Huamin Li of the Department of Electrical Engineering, and Fei Yao, of the Department of Materials Design and Innovation.

Read the story here.