Superhigh-voltage gallium oxide transistors could transform power electronics

IEEE Spectrum reports on research led by UB associate professor of electrical engineering Uttam Singisetti. The article focuses on Singisetti’s work with transistors made primarily with gallium oxide, and how his latest device can handle more than 8,000 volts.

“Those are extraordinary numbers compared to what’s reported,” says Singisetti.

Read the story here.

The research was also reported in EE Design It.