David Eason

PhD

David Eason

PhD

David Eason

PhD

Technical Director, Shared Instrumentation Laboratories

Research Topics

Thin film deposition

Contact Information

208 Davis Hall

Buffalo NY, 14260

Phone: (716) 645-8496

dbeason@buffalo.edu

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Selected Publications

  • Che Jin Bae, J. McMahon, H. Detz, G. Strasser, J. Park, and E. Einarsson, D.B. Eason†, “Growth and Characterization of Wafer-scale GaTe nanolayers by Molecular Beam Epitaxy”, Submitted for publication, (2016)
  • A.V. Stier, C.T. Ellis, J. Kwon, H. Xing, H. Zhang, D. Eason, G. Strasser, T. Morimoto, H. Aoki, H, Heng, B.D. McCombe, and J. Cerne, “Terahertz Dynamics of a Topologically Protected State: Quantum Hall Effect Plateaus near the Cyclotron Resonance of a Two-Dimensional Electron Gas”, Phys. Rev. Lett. 115, 247401 (2015), doi:10.1103/PhysRevLett.115.247401
  • Weilu Gao, Xuan Wang, Rui Chen, David B. Eason, Gottfried Strasser, Jonathan P. Bird, and Junichiro Kono, “Electroluminescence from GaAs/lGaAs Heterostructures in Strong in-Plane Electric Fields: Evidence for k- and Real-Space Charge Transfer”, ACS Photonics, 2(8), 1155, (2015)
  • Rui Chen, Weilu Gao, Xuan Wang, Gregory R. Aizin, John Mikalopas, Takashi Arikawa, Koichiro Tanaka, David B. Eason, Gottfried Strasser, Junichiro Kono, and Jonathan P. Bird, “High-Voltage Breakdown and the Gunn Effect in GaAs/AlGaAs Nanoconstrictions”, IEEE Trans. Nanotechnol., 14, 524 (2015)
  • A.V. Stier, C.T. Ellis, H. Zhang, D. Eason, G. Strasser, B.D. McCombe, J. Cerne, "THz Quantum Hall conductivity studies in a GaAs heterojunction", AIP Conf. Proc. 1399, 627 (2011), doi:10.1063/1.3666534
  • V. Mitin, A. Antipov, A. Sergeev, N. Vagidov, D. Eason, G. Strasser, "Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers", Nanoscale. Res. Lett. 6, 21, 1-6 (2010), doi:10.1007/s11671-010-9767-y
  • S. Adachi, K. Hazu, T. Sota, S.F. Chichibu, G. Cantwell, D.B. Eason, D.C. Reynolds, C.W. Litton , “Biexciton formation and exciton–exciton correlation effects in bulk ZnO”, Semicond. Sci. Technol. 19 S276-S278 (2004)
  • Hazu, K., T. Sota, K. Suzuki, S. Adachi, Sf Cchichibu, G. Cantwell, DB Eeason, DC Reynolds, and CW Litton. "Strong biexcitonic effects and exciton-exciton correlations in ZnO." Physical review B. Condensed matter and materials physics 68, no. 3 (2003)
  • N.Y. Garces, Lijun Wang, N.C. Giles, L.E. Halliburton, G. Cantwell, D.B. Eason, “Molecular nitrogen (N2) acceptors and isolated nitrogen (N) acceptors in ZnO crystals,” Journal of Applied Physics 94, 519 (2003)
  • S. F. Chichibu , T. Sota , G. Cantwell, D. B. Eason , “Polarized photoreflectance spectra of excitonic polaritons in a ZnO single crystal”, J. Appl. Phys. 93, 756 (2003)
  • N.Y. Garces, N.C. Giles, L.E. Halliburton, G. Cantwell, D.B. Eason, D.C. Reynolds, D.C. Look, “Production of nitrogen acceptors in ZnO by thermal annealing,” Applied Physics Letters 80, 1334 (2002)
  • D.C. Look, D.C. Reynolds, C.W. Litton, R.L. Jones, D.B. Eason, G. Cantwell, “Characterization of Homoepitaxial p-type ZnO Grown by molecular beam epitaxy”, Applied Physics Letters 81(10), 1830 (2002)
  • D. B. Eason, Z. Yu, W. C. Hughes, C. Boney, J. W. Cook, Jr., J. F. Schetzina, D. R. Black, Gene Cantwell, William C. Harsch, "High-brightness light-emitting diodes grown by molecular beam epitaxy on ZnSe substrates", J. Vac. Sci. Technol. B 13(4), 1566 (1995)
  • D. B. Eason, W. C. Hughes, J. Ren, M. Reigner, Z. Yu, J. W. Cook, Jr., J. F. Schetzina, G. Cantwell and W. C. Harsch, "High-brightness green light-emitting diodes", Electr. Letters 30, 1178 (1994)
  • D. B. Eason, Z. Yu, C. Boney, J. Ren, L. E. Churchill, J. W. Cook, Jr., J. F. Schetzina and N. A. El-Masry, "Quaternary II-VI alloys for blue and green light emitting diode applications", J. Crystal Growth, 138, 703 (1994)
  • J. Ren, D. B. Eason, L. E. Churchill, Z. Yu, C. Boney, J. W. Cook, Jr., J. F. Schetzina and N. A. El-Masry, "Integrated heterostructure devices composed of II-VI materials with Hg-based contact layers", J. Crystal Growth, 138, 455 (1994) A.J. Fischer, D.S. Kim, J. Hays, W. Shan, J.J. Song, D.B. Eason, J. Ren, J.F. Schetzina, H. Luo, J.K. Furdyna, Z.Q. Zhu, T. Yao, J.F. Klem, and W. Schafer, “Femtosecond coherent spectroscopy of bulk ZnSe and ZnCdSe/ZnSe quantum wells”, Phys. Rev. Lett. 73, 2368-2371 (1994) A.J. Fischer, D.S. Kim, J. Hays, W. Shan, J.J. Song, D.B. Eason, J. Ren, J.F. Schetzina, H. Luo, and J.K. Furdyna, “Femtosecond four-wave-mixing studies of exciton localization and exciton-exciton interaction in ZnSe/ZnxCd1-xSe quantum wells”, Phys. Rev. B 50, 17643-17646 (1994)
  • J. Ren, D. B. Eason, Z. Yu, B. Sneed, J. W. Cook, Jr., J. F. Schetzina, N. A. El-Masry, X. H. Yang, J. J. Song, Gene Cantwell and William C. Harsch, "Blue/green ZnSe-ZnCdSe light emitting diodes and photopumped laser structures grown by molecular beam epitaxy on ZnSe substrates", J. Vac. Sci. & Technol., B 12(2), 1262 (1994)
  • J. Ren, D. B. Eason, Y. Lansari, Z. Yu, K. A. Bowers, C. Boney, B. Sneed, J. W. Cook, Jr., J. F. Schetzina, M. W. Koch and G. W. Wicks, "Blue/green light emitting diodes and laser diodes based on II-VI heterostructures grown on predeposited GaAs buffer layers", J. Vac. Sci. & Technol., B 11(3), 955 (1993)
  • R. P. Vaudo, D. B. Eason, K. J. Gossett, J. W. Cook, Jr. and J. F. Schetzina, "Ultraviolet quantum well structures based on ZnS/ZnSSe and ZnS/ZnCdSe multilayers by molecular beam epitaxy", J. Vac. Sci. & Technol., B 11(3), 875 (1993)

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