Over $1 million has been invested in clean room equipment since opening. The clean room facility is the most advanced of its kind in Western New York and highlights UB's continued committment to research and development.

ALD (Atomic Layer Deposition) Cambridge Nanotech Savannah S100

ALD (Atomic Layer Deposition) Cambridge Nanotech Savannah S100

  • High quality, thin films (insulators)
  • Layer-by-layer atomic growth
  • Hafnium Oxide (HFO2)
  • Aluminum oxide (Al2O3)
  • Up to 4” wafers
  • Can be used for transistor gates
Metal Deposition (DC/RF sputter)

Metal Deposition (DC/RF sputter)

  • Denton Vacuum DC/RF sputtering system
  • Deposits thin films of metals by sputtering
  • Typically molybdenum, copper, aluminum, or chromium
  • Can deposit 3 different layers in one process cycle
  • Turbo-pumped high vacuum chamber
MBE (Molecular Beam Epitaxy)

MBE (Molecular Beam Epitaxy)

  • Ultra-high vacuum chamber for thin film growth (MDC)
  • Oxygen RF plasma source (Oxford Instruments)
  • Nitrogen RF plasma source
  • 6 effusion cells for Zn, ZnCl2,Mg, and other dopants
  • RHEED (Reflection High Energy Electron Diffraction)
  • RGA (Residual Gas Analyzer)
Capabilities: Microscopy SEM/e-beam writer

JEOL 6500F FE-SEM Microscopy e-beam writer

  • w/e-beam writer lithography attachment and beam control software
Karl Suss MJB-4 Photolithography

Karl-Suss MJB-4 Photolithography

  • Contact UV mask aligner/exposure system
Samco RF plasma etching system

Samco RF Plasma Etching System

  • Used for silicon based wafers and devices
  • CF4 and O2 etching/cleaning
  • Semi-automatic operation
Dry Chemical Etching Trion ICP RIE (w/loadlock)

Dry Chemical Etching Trion ICP RIE

  • Ion-coupled Plasma (ICP RIE)
  • 2 Process Chambers
  • Load Lock
  • Automated 4” wafer handling
  • 8 Process gas channels
  • Safe scrubbing of exhaust gases
GCA Waferstep 200 ALS i-line Auto Mask Stepper

GCA Waferstep 200 ALS i-line Auto Mask Stepper

  • 4” Wafer Capability
  • 5X optical reduction
  • i- line, 365 nm
  • 0.15 micron alignment tolerance, layer to layer
SPI Gold sputter coater (SEM sample prep)

SPI Gold Sputter Coater (SEM sample prep)

  • Ar gas plasma sputtering system for Gold
  • Useful for gold coating non-conductive samples for SEM imaging
Torr International RIE

Torr International RIE

  • Plasma based dry etching system
  • Primarily used for GaAs based devices/wafers
  • BCl3 & Ar etching gases
  • Safe scrubbing of exhaust gases
  • Manual operation
  • Dry Chemical Etching for compound semiconductors
PECVD (Plasma Enhanced Chemical Vapor Deposition)

PECVD (Plasma Enhanced Chemical Vapor Deposition)

  • Trion Technologies
  • Plasma based silicon oxide deposition system
  • Primarily used for Si based devices/wafers
  • TEOS precursor gas
  • Manual operation
Zeiss Auriga cross beam system

Zeiss Auriga Cross Beam System

  • Ga-ion Focused Ion Beam (FIB) for milling
  • In-lens secondary electron (SE) and backscattered electron (BE) detectors
  • Gas Injection System for metal deposition
  • Electron Dispersive Spectroscopy (EDS) by Oxford Instruments
  • Scanning Tunneling Electron Microscopy (STEM)
  • Transmission Electron Microscopy lift-out tool (Omniprobe)